N-Series负载电阻

 

  N-Series                                                        

 

 

The IMS N-Series thick film high power chip resistors and chip terminations on aluminum nitride are ideal for most applications requiring high thermal conductivity in a small size package. AlN is an ideal replacement for BeO with it’s high power dissipation and no environmental or health hazards. Thick film technology provides a stable resistive element at a very affordable price.

 

FEATURES

• High stability thick film resistive element

• Very high power dissipation

• AlN substrate material

• Tight TCRs

• Maximum working voltage: E=√PR

• Standard resistance range is 10Ω to 2KΩ* (Other values available, consult factory)

• Standard tolerance is 2% or 5% (Other tolerances available, consult factory)

• Operating temperature: -55°C to +150°C

• Ultra Leach Resistant termainals (ULR) available

* Max value for 0505 and 2525 sizes is 1K